33 ps optical switching of symmetric self-electro-optic effect devices
- 29 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (18) , 1843-1845
- https://doi.org/10.1063/1.104034
Abstract
We report significant improvement in the optical switching times of symmetric self-electro-optic effect devices due to enhanced tunneling by using a 35 Å barrier versus the previous 60 Å barrier thick multiple quantum well GaAs/AlxGa(1−x)As devices. Also, the voltage required for bistability was reduced from 10 V in the thick barrier devices to 3 V in the thin barrier devices with no apparent degradation in the contrast ratio.Keywords
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