Effects of operating temperature on electrical parameters in an analog process
- 1 July 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Circuits and Devices Magazine
- Vol. 5 (4) , 31-38
- https://doi.org/10.1109/101.29900
Abstract
The variation of basic MOS device properties with operating temperature is examined. These devices include both n-channel and p-channel transistors, resistors, junction diodes, and precision capacitors. The theory of such variations is briefly examined, and fits to empirical expressions are graphically derived. Implications of such variations are briefly explored.Keywords
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