Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures part I: Theory
- 1 January 1984
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 24 (3) , 465-485
- https://doi.org/10.1016/0026-2714(84)90475-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Extreme Temperature Range MicroelectronicsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1978
- Semiconductors face the '80s: Seven leaders of the boomingest business in the U.S. prognosticate the problems supergrowth could lead toIEEE Spectrum, 1977
- Threshold voltage variations with temperature in MOS transistorsIEEE Transactions on Electron Devices, 1971
- Temperature dependence of the saturation current of MOST'sIEEE Transactions on Electron Devices, 1968
- Temperature dependence of MOS transistor characteristics below saturationIEEE Transactions on Electron Devices, 1966
- Temperature coefficient of drift of m.o.s. transistorsElectronics Letters, 1966
- Temperature effects in m.o.s. transistorsElectronics Letters, 1966
- Electron and hole mobilities in inversion layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1965
- Temperature dependence of n-type MOS transistorsIEEE Transactions on Electron Devices, 1965
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965