Correlation between Fermi Level Stabilization Positions and Maximum Free Carrier Concentrations in III–V Compound Semiconductors
- 1 May 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (5A) , L698
- https://doi.org/10.1143/jjap.29.l698
Abstract
Maximum carrier concentrations reported in the literature are compared with the respective Fermi level stabilization positions for various semiconductors. It is shown that heavy n-type (p-type) doping is obtainable for a semiconductor whose Fermi level stabilization position is located near the conduction (valence) band edge.Keywords
This publication has 41 references indexed in Scilit:
- Doping of InP and GaInAs with S during metalorganic vapor-phase epitaxyJournal of Applied Physics, 1989
- Secondary ion mass spectroscopy depth profiles of heterojunction bipolar transistor emitter-base heterojunctions grown by low pressure OMVPEJournal of Crystal Growth, 1988
- Electron Localization by a Metastable Donor Level in: A New Mechanism Limiting the Free-Carrier DensityPhysical Review Letters, 1988
- LPE growth and characterization of n-type InAsJournal of Crystal Growth, 1986
- Blue light emission from ZnSe p-n junctionsJournal of Applied Physics, 1985
- Tin incorporation in GaAs layers grown by low pressure MOVPEJournal of Crystal Growth, 1984
- Doped InGaP grown by MOVPE on GaAsJournal of Crystal Growth, 1984
- Doping characteristics and electrical properties of Be-doped p-type AlxGa1−xAs by liquid phase epitaxyJournal of Applied Physics, 1980
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Properties of Heavily Doped n-Type GermaniumJournal of Applied Physics, 1961