Electrical Properties of Thermal Donors Formed in CZ-Si during Heat Treatment at 450 °C
- 16 October 1984
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 85 (2) , 575-584
- https://doi.org/10.1002/pssa.2210850232
Abstract
No abstract availableKeywords
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- Electrical and infrared spectroscopic investigations of oxygen-related donors in siliconPhysica Status Solidi (a), 1979
- On the electrical activity of oxygen in siliconPhysica Status Solidi (a), 1979
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961