Photoluminescence of very dilutely C+ ion-implanted GaAs
- 15 September 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (6) , 623-625
- https://doi.org/10.1063/1.96093
Abstract
Very dilute C+ (carbon) ion implantations were carried out for extremely pure GaAs wafers grown by molecular beam epitaxy (MBE). Low‐temperature photoluminescence measurements revealed that at least five sharp new emission lines are commonly formed near bound exciton emission region by the introduction of C for the dose range between 1015 and 1017 cm−3. It was for the first time demonstrated that the most dominant line among the above emission is identical to the g line in defect‐induced bound exciton emission series which are frequently observed in rather impure MBE‐grown or metalorganic chemical vapor deposition (MOCVD)‐grown GaAs samples.Keywords
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