Kinetic studies on CF4 plasmas during etching of Si
- 1 September 1983
- journal article
- Published by Springer Nature in Plasma Chemistry and Plasma Processing
- Vol. 3 (3) , 337-342
- https://doi.org/10.1007/bf00564631
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Effect of Dark Space in RF Glow Discharge on Plasma Etching CharacteristicsJapanese Journal of Applied Physics, 1978
- Control of relative etch rates of SiO2 and Si in plasma etchingSolid-State Electronics, 1975
- Dissociation of SF6, CF4, and SiF4 by electron impactJournal of Research of the National Bureau of Standards, 1948