Low-frequency noise in self-aligned bipolar transistors

Publisher Website
Google Scholar
Abstract
We report the first study of the low‐frequency noise in self‐aligned npn bipolar transistors, which use the polysilicon emitter. Some of these devices showed excess noise spectra different from the 1/f law generally observed in diffused junction transistors, and the spectral shape S( f ) was found to vary from sample to sample. For instance, we have observed two different characteristics, S( f )∼1/f and S( f )∼1/[1+( f/f0)2], in two adjacent transistors on the same chip. We attribute the latter to carrier trapping in the oxide barrier at the poly‐/monosilicon boundary, whose inhomogeneity could explain the wide variation of the noise spectra.

This publication has 23 references indexed in Scilit: