Hot-carrier simulation for MOSFETs using a high-speed Monte Carlo method
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (8) , 1344-1350
- https://doi.org/10.1109/16.2557
Abstract
Models of hot-carrier-induced phenomena in the high-energy region for small-scale MOSFETs are presented. A free-flight optimization technique has also been developed to simulate the high-energy carrier dynamics by the Monte Carlo method with reasonable CPU time. The hot-carrier effect was investigated in detail from the carrier velocity and energy distribution viewpoint with rigorous treatment of carrier scattering processes, especially for photogeneration and impact ionization. The simulated results were in good agreement with experimental results. The analyses revealed that the hot-carrier effect is mainly dominated by carrier temperature, but is suppressed by impact ionizationKeywords
This publication has 17 references indexed in Scilit:
- Quantum yield of electron impact ionization in siliconJournal of Applied Physics, 1985
- Lucky-drift mechanism for impact ionisation in semiconductorsJournal of Physics C: Solid State Physics, 1983
- The intra-collisional field effect in semiconductors. I. Analytic resultsJournal of Physics C: Solid State Physics, 1982
- Scattering by ionization and phonon emission in semiconductorsPhysical Review B, 1980
- Aspects of the Theory of Impact Ionization in Semiconductors (I)Physica Status Solidi (b), 1980
- Quantum transport theory of high-field conduction in semiconductorsJournal of Physics C: Solid State Physics, 1973
- Impact ionization in narrow gap semiconductorsPhysica Status Solidi (a), 1973
- Monte Carlo Calculations on Electron Transport in CdTePhysica Status Solidi (b), 1972
- Electron Scattering by Pair Production in SiliconPhysical Review B, 1967
- Chapter 10 Quantum Efficiency of the Internal Photoelectric Effect in InSbPublished by Elsevier ,1966