Hot Carriers in Semiconductors Probed by Picosecond Techniques

This publication has 49 references indexed in Scilit:

• High-field drift velocity of electrons at the Si–SiO2 interface as determined by a time-of-flight technique
  Journal of Applied Physics, 1983
• Cooling of high density electron-hole plasma
  Solid State Communications, 1982
• Monte Carlo particle simulation of GaAs submicron n ⁺ - i - n ⁺ diode
  Electronics Letters, 1982
• Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
  Applied Physics Letters, 1982
• Measurement of the high-field drift velocity of electrons in inversion layers on silicon
  IEEE Electron Device Letters, 1981
• Many-body Coulomb effects on the gain and absorption line shapes of the electron-hole plasma in GaAs
  Physical Review B, 1981
• Experimental aspects of hot electron distribution functions
  Solid-State Electronics, 1978
• Scattering probabilities for holes. II. Polar optical scattering mechanism
  Physica Status Solidi (b), 1973
• Electron-Hole Liquids in Semiconductors
  Physical Review B, 1973
• Low-Temperature Non-Ohmic Galvanomagnetic Effects in Degeneraten-Type InAs
  Physical Review B, 1972