Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation
- 15 September 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (11) , 660-662
- https://doi.org/10.1063/1.97560
Abstract
Polycrystalline Si films on oxidized Si wafers have been subjected to a rapid thermal processing anneal prior to As ion implantation. After ion implantation the films are given another rapid thermal processing anneal to activate the As. The preimplant anneal causes the as-deposited grain size to increase by ∼ a factor of 10. These films have a 20–30% lower sheet resistance than films that were post-implant annealed only. The increase in grain size by the preimplant anneal reduces the grain boundary area and therefore, minimizes the amount of dopant in the grain boundary relative to the grain.Keywords
This publication has 8 references indexed in Scilit:
- Properties of Ion‐Implanted Polycrystalline Si Layers Subjected to Rapid Thermal AnnealingJournal of the Electrochemical Society, 1985
- Transient annealing of ion implanted semiconductor materialsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Dopant Activation and Redistribution in As+‐Implanted Polycrystalline Si by Rapid Thermal ProcessingJournal of the Electrochemical Society, 1985
- Grain growth during transient annealing of As-implanted polycrystalline silicon filmsApplied Physics Letters, 1984
- Fast diffusion of As in polycrystalline silicon during rapid thermal annealingApplied Physics Letters, 1984
- Rapid isothermal annealing of As-, P-, and B-implanted siliconJournal of Applied Physics, 1984
- Improved Conductivity in Polysilicon Films by Pre‐annealingJournal of the Electrochemical Society, 1984
- Infrared Radiation Annealing of Ion‐Implanted Polycrystalline Silicon Using a Graphite HeaterJournal of the Electrochemical Society, 1983