Effects of quantum confinement and compositional grading on the band structure of heterojunctions
- 30 June 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (6) , 573-579
- https://doi.org/10.1016/0038-1101(79)90020-0
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Auger profiling of ’’abrupt’’ LPE AlxGa1−xAs-GaAs heterojunctionsJournal of Applied Physics, 1977
- Semiconductor superfine structures by computer-controlled molecular beam epitaxyThin Solid Films, 1976
- A simplified model for graded-gap heterojunctionsSolid-State Electronics, 1975
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- Ga1−x Alx As superlattices profiled by Auger electron spectroscopyApplied Physics Letters, 1974
- Far-Infrared Cyclotron Resonance in the Inversion Layer of SiliconPhysical Review Letters, 1974
- Cyclotron Resonance of Electrons in an Inversion Layer on SiPhysical Review Letters, 1974
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Theory of Electronic States and Transport in Graded Mixed SemiconductorsPhysical Review B, 1969
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962