Photopumped laser operation of AlxGa1−xAs-GaAs quantum well heterostructures with Se and Mg sheet doping

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Abstract
Photoluminescence (77 and 300 K) and transmission electron microscopy (TEM) data are presented on AlxGa1−xAs‐GaAs quantum well heterostructures with Se sheet doping in the GaAs quantum wells and Mg sheet doping in the AlxGa1−xAs (x∼0.2) barriers. Sheet or ‘‘spike’’ doping, which is surface deposited during the metalorganic chemical vapor deposition crystal growth, leads to a high impurity concentration and direct observation of the doping layer in TEM. Photopumped laser operation (77 and 300 K, pulsed and continuous) of compensated samples leads to modes 30–40 meV below the n=1 confined‐particle electron‐to‐heavy‐hole transition and involves the Se impurity. Mg spike doping of the barriers is used to compensate the Se doping of the wells, making the active region p type and thus allowing the observation of stimulated emission involving the ‘‘spike’’ distribution of Se.