Electrical Characteristics of an Upper Interface on a Buried SiO2 Layer Formed by Oxygen Implantation

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Abstract
The electrical characteristics of an upper interface on a buried oxide layer formed by oxygen implantation in an Si wafer and subsequent thermal annealing were studied using an MOS diode and capacitance-voltage (C-V) measurements. The measured C-V curves strongly depended on the ion dose. The C-V curve was independent of the gate voltage for a dose of 1.2×1018 cm-2, voltage-dependent for doses above 1.8×1018 cm-2, and similar to those for thermal oxide for a dose of 2.4×1018 cm-2. This strong dependence on the ion dose is considered to result from a change in the interface structure with increase in dose. In this change, the transition layer existing between the buried oxide and the upper Si layer at low doses, which shields the upper Si layer from external electric fields, disappears with increase in dose.