A constant-temperature method for evaluating deep-level parameters in Schottky-barrier TSC measurements
- 21 February 1975
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 8 (3) , 254-261
- https://doi.org/10.1088/0022-3727/8/3/009
Abstract
From a measurement at several different temperatures of the constant-temperature current decay produced by the thermal emptying of deep centres within the depletion region of a Schottky barrier, the thermal activation energy and the thermal capture cross section of these centres can be evaluated. The method is capable of better accuracy than that displayed by conventional heating-rate methods and is also applicable in the presence of several other levels. The method also takes into account the temperature dependence of capture cross section of the centres and, in cases where this is strong, permits this dependence to be calculated.Keywords
This publication has 8 references indexed in Scilit:
- Thermally stimulated current measurements and their correlation with efficiency and degradation in GAP LED'SApplied Physics Letters, 1974
- Photoionization of electrons and holes at oxygen donors in gallium phosphideSolid State Communications, 1973
- Background energy level spectroscopy in GaP using thermal release of trapped space charge in Schottky barriersApplied Physics Letters, 1972
- Comments on the conduction mechanism in Schottky diodesJournal of Physics D: Applied Physics, 1972
- Photocapacitance studies of deep-double-electron-trap oxygen in gallium phosphideApplied Physics Letters, 1972
- Determination of deep centers in silicon by thermally stimulated conductivity measurementsSolid-State Electronics, 1969
- Extensions to the method of trap analysis by thermally stimulated conductivity curvesJournal of Physics D: Applied Physics, 1968
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960