Control of the GaAs/SiO2 interface through sulfur passivation and a photo-CVD process
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 54, 95-98
- https://doi.org/10.1016/0169-4332(92)90025-s
Abstract
No abstract availableKeywords
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- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979