1/f noise and radiation effects in MOS devices
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (11) , 1953-1964
- https://doi.org/10.1109/16.333811
Abstract
No abstract availableKeywords
This publication has 104 references indexed in Scilit:
- Determining the energy distribution of traps in insulating thin films using the thermally stimulated current techniquePhysical Review Letters, 1992
- Evidence that similar point defects cause 1/fnoise and radiation-induced-hole trapping in metal-oxide-semiconductor transistorsPhysical Review Letters, 1990
- Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noiseAdvances in Physics, 1989
- A thermal activation model for 1/ƒy noise in Si-MOSFETsSolid-State Electronics, 1988
- Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (?) NoisePhysical Review Letters, 1984
- 1/f noisePhysica B+C, 1976
- Surface state related noise in MOS transistorsSolid-State Electronics, 1970
- Theory of low frequency noise in Si MOST'sSolid-State Electronics, 1970
- Low frequency noise in MOS transistors—II ExperimentsSolid-State Electronics, 1968
- Low frequency noise in MOS transistors—I TheorySolid-State Electronics, 1968