GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy
- 6 March 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (10) , 922-924
- https://doi.org/10.1063/1.100809
Abstract
Single and multiple quantum wells of GaSb/GaInSb were grown by metalorganic vapor phase epitaxy. X-ray diffraction on an 80 Å single well confirmed the Ga1−xInxSb composition to be x=0.15, for which the lattice mismatch is ≊1.0%. Photoluminescence and photoconductivity from this sample both showed a signal due to carriers in the well, the position of which was in good agreement with the calculated band diagram. Shubnikov–de Haas oscillations in the transverse magnetoresistance (ρxx) of a four-period multiquantum well, and the associated quantum Hall effect, indicated that a two-dimensional hole gas was present in one of the wells. Unusually, the strongest oscillations were seen for occupancy of an odd number of (spin split) Landau levels (ν=1,3,5,...,etc.) This sample also showed luminescence peaks at 738 and 755 meV which were attributed to recombination in the wells.Keywords
This publication has 17 references indexed in Scilit:
- Growth of GaSb by MOVPESemiconductor Science and Technology, 1988
- Growth of GaSb by MOVPE; Optimization of electrical quality with respect to growth rate, pressure, temperature and ratioJournal of Crystal Growth, 1988
- Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structuresApplied Physics Letters, 1987
- Epitaxie en phase vapeur par pyrolyse d'organométalliques (EPVOM) des solutions solides ternaires Ga1-xAl xSb, Ga1-xInxSb et GaAsySb1-y sur substrats de GaSbRevue de Physique Appliquée, 1987
- Molecular-beam epitaxy of GaSb/AlSb optical device layers on Si(100)Journal of Applied Physics, 1986
- A photoluminescence and Hall-effect study of GaSb grown by molecular-beam epitaxyJournal of Applied Physics, 1986
- Molecular beam epitaxy of GaSb and InGaSbJournal of Crystal Growth, 1985
- The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimonyJournal of Electronic Materials, 1982
- The Use of Metalorganics in the Preparation of Semiconductor Materials: VII . Gallium AntimonideJournal of the Electrochemical Society, 1979
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974