Growth of GaSb by MOVPE
- 1 April 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (4) , 315-320
- https://doi.org/10.1088/0268-1242/3/4/007
Abstract
High-quality homo- and hetero-epitaxial GaSb has been grown from TMGa and TMSb using atmospheric pressure metal-organic vapour-phase epitaxy (MOVPE). Unintentionally doped material was p-type. At 295 K it had a carrier concentration of around 3.0*1016 cm-3 and a corresponding Hall mobility in the range of 670 to 1000 cm2 V-1 s-1. Growth parameters were carefully correlated with surface morphology, electrical quality and photoluminescence data to establish the growth window for this material.Keywords
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