The Mechanism of Excimer Laser-Induced Amorphization of Ultra-Thin Si Films
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Pulsed laser-induced melting followed by quenching of silicon filmsJournal of Applied Physics, 1993
- Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon filmsApplied Physics Letters, 1993
- Experimental test of kinetic theories for heterogeneous freezing in siliconPhysical Review B, 1993
- Mechanism of pulsed laser-induced amorphization of silicon filmsApplied Physics Letters, 1991
- Supercooling and Nucleation of Silicon after Laser MeltingPhysical Review Letters, 1988
- Phase diagram of silicon by molecular dynamicsPhysical Review B, 1987
- Maximum supercooling of silicon encapsulated in SiO2Journal of Applied Physics, 1986
- Transition Between Condensed Phases In Si And GeMRS Proceedings, 1985
- Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser IrradiationPhysical Review Letters, 1983
- Amorphous Si, Crystallization And MeltingMRS Proceedings, 1982