Maximum supercooling of silicon encapsulated in SiO2
- 15 March 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (6) , 1977-1980
- https://doi.org/10.1063/1.336376
Abstract
An SiO2‐encapsulated silicon‐on‐silica structure has been used to examine quantitatively the supercooling of Si. Fully melted, isolated Si islands generally exhibit a maximum supercooling of 235 °C, i.e., their freezing occurs at a temperature around 1175 °C. The implications of this behavior for the growth of thin Si films on amorphous substrates via zone melting are presented and briefly discussed.This publication has 14 references indexed in Scilit:
- Undercooling of molten siliconApplied Physics Letters, 1985
- Origin of oriented crystal growth of radiantly melted silicon on SiO2Applied Physics Letters, 1984
- RF Recrystallization of Polycrystalline Silicon on Fused Silica for MOSFET DevicesJournal of the Electrochemical Society, 1984
- Laser recrystallization of Si over SiO2 with a heat-sink structureJournal of Applied Physics, 1984
- Growth of monocrystalline silicon islands on insulating substratesThin Solid Films, 1984
- Growth of Si on insulators using electron beamsJournal of Crystal Growth, 1983
- Laser crystallization of thin Si films on amorphous insulating substratesJournal of Crystal Growth, 1983
- Thin film crystal growth of Si on fused silica: Effects of growth front dynamics on crystallographyJournal of Applied Physics, 1983
- Graphite-strip-heater zone-melting recrystallization of Si filmsJournal of Crystal Growth, 1983
- Microanalysis of single-crystal Si recrystallized using halogen lampsJournal of Applied Physics, 1983