Microanalysis of single-crystal Si recrystallized using halogen lamps
- 1 July 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (7) , 3892-3896
- https://doi.org/10.1063/1.332561
Abstract
Halogen lamps have been used to recrystallize polycrystalline silicon deposited on SiO2. 〈100〉 single crystals have been obtained. 100–200 μm wide subgrains are present in the recrystallized films. We present the results of a structural analysis of the defects by using essentially Transmission Electron Microscopy. We can classify the defects as follows: primary subgrain boundaries are misfit dislocations resulting from a low angle misorientation between adjacent growing regions. Secondary subgrain boundaries are related to the strain present in the films during the recrystallization. We find coherent and incoherent precipitates. Precipitates result from a segregation of impurities. Some of them are revealed as α-SiC.This publication has 8 references indexed in Scilit:
- Recrystallization of polysilicon films using incoherent lightMaterials Letters, 1982
- Arc lamp zone melting and recrystallization of Si films on oxidized silicon substratesApplied Physics Letters, 1982
- Use of incoherent light for annealing implanted Si wafers and growing single-crystal Si on SiO 2Electronics Letters, 1982
- Zone-melting recrystallization of 3-in.-diam Si films on SiO2-coated Si substratesApplied Physics Letters, 1982
- Cellular growth in micro-zone melted siliconMaterials Letters, 1982
- Subgrain boundaries in laterally seeded silicon-on-oxide formed by graphite strip heater recrystallizationApplied Physics Letters, 1982
- Improved techniques for growth of large-area single-crystal Si sheets over SiO2 using lateral epitaxy by seeded solidificationApplied Physics Letters, 1981
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972