Growth of Si on insulators using electron beams
- 2 October 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 63 (3) , 445-452
- https://doi.org/10.1016/0022-0248(83)90161-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- SOI by CVD: Epitaxial Lateral Overgrowth (ELO) process—ReviewJournal of Crystal Growth, 1983
- Single Crystal Silicon Films on Amorphous Insulators: Growth by Lateral Nucleated Epitaxy Using Scanning Laser and Electron Beams and Evaluation by Electron Backscattering ContrastJournal of the Electrochemical Society, 1982
- Magnetically focused line source electron gunReview of Scientific Instruments, 1982
- A line-source electron beam annealing systemJournal of Applied Physics, 1982
- Recrystallisation of CVD poly-Si on insulator by dual electron-beam processingElectronics Letters, 1982
- Oxide charges induced in thermal silicon dioxide by scanning electron and laser beam annealingJournal of Applied Physics, 1982
- MOSFET's in electron-beam recrystallized PolySiliconIEEE Electron Device Letters, 1981
- Grain growth of polycrystalline silicon films on SiO2 by cw scanning electron beam annealingApplied Physics Letters, 1981
- Modeling of beam voltage effects in electron-beam annealingJournal of Vacuum Science and Technology, 1979
- Pulsed-electron-beam annealing of polycrystalline-silicon filmsApplied Physics Letters, 1979