Grain growth of polycrystalline silicon films on SiO2 by cw scanning electron beam annealing
- 15 October 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (8) , 645-647
- https://doi.org/10.1063/1.92839
Abstract
Reduced pressure, chemical vapor deposited polycrystalline silicon films (5000 Å thick) over thermally grown SiO2 on (100) silicon wafers are recrystallized by a scanning electron microscope modified electron beam annealing system. On the basis of transmission electron microscope bright‐field images and electron diffraction patterns, large grained polycrystalline silicon films of 20‐μm average grain size are obtained after electron beam annealing. Electron beam current, scanning rate, and annealing repetition are found to be important parameters in the recrystallization. Optimum values for them are from 1.6 to 1.9 mA, from 40 to 80 cm/sec, and from 5 to 10 times, respectively.Keywords
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