Laser recrystallization of Si over SiO2 with a heat-sink structure
- 15 March 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (6) , 1607-1609
- https://doi.org/10.1063/1.333421
Abstract
Complete single crystalline silicon films over SiO2 have been produced with a heat‐sink structure designed for best utilization of temperature gradients during resolidification process induced by an incident cw Ar laser beam. The structure includes device regions with thin SiO2 layers which act as a heat sink to the substrate and the peripheral regions with thick SiO2 layers. By using this technique, residual grain boundaries in the laser recrystallized silicon over insulator can be eliminated. N‐channel metal‐oxide‐semiconductor field‐effect transistors fabricated in the recrystallized silicon films with a heat‐sink structure exhibit good device characteristics, having a surface electron mobility of 500 cm2/V s which is comparable to that of bulk devices.This publication has 4 references indexed in Scilit:
- Use of selective annealing for growing very large grain silicon on insulator filmsApplied Physics Letters, 1982
- Laser-induced lateral epitaxial growth of silicon over silicon dioxide with locally varied encapsulationApplied Physics Letters, 1982
- Recrystallization of Si on amorphous substrates by doughnut-shaped cw Ar laser beamApplied Physics Letters, 1982
- The use of beam shaping to achieve large-grain cw laser-recrystallized polysilicon on amorphous substratesApplied Physics Letters, 1981