Spin dependent recombination: a /sup 29/Si hyperfine study of radiation-induced P/sub b/ centers at the Si/SiO/sub 2/ interface
- 1 December 1990
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 37 (6) , 1650-1657
- https://doi.org/10.1109/23.101174
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- A spin dependent recombination study of radiation induced defects at and near the Si/SiO/sub 2/ interfaceIEEE Transactions on Nuclear Science, 1989
- Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (100) silicon substratesJournal of Applied Physics, 1988
- Spin-dependent recombination in irradiated Si/SiO2 device structuresApplied Physics Letters, 1988
- 2 9Si hyperfine structure of unpaired spins at the Si/SiO2 interfaceApplied Physics Letters, 1983
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966
- Electron Spin Resonance Spectra of Oriented RadicalsChemical Reviews, 1964
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-CenterPhysical Review B, 1964
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952