Ion implantation into insulators: charge-removal studies using ion-induced characteristic x rays
- 15 December 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (12) , 592-595
- https://doi.org/10.1063/1.1654268
Abstract
The effectiveness of a number of charge‐removal techniques during ion implantation into insulators has been examined by monitoring the ion‐induced characteristic x‐ray emission of target atoms during protonimplantation. Successful removal of charge buildup occurs for samples which are coated with a thin conductingsurface layer and for samples which have intimate contact between the implanted region and a conducting mask and are flooded with a defocused ion beam.Keywords
This publication has 8 references indexed in Scilit:
- Ion bombardment fabrication of optical waveguides using electron resist masksApplied Physics Letters, 1972
- Properties of Ion-Bombarded Fused Quartz for Integrated OpticsApplied Optics, 1972
- Electronic stopping measurements of charged-particles in radiophotoluminescent glassRadiation Effects, 1972
- Negative Ion Bombardment of Insulators to Alleviate Surface Charge-UpJournal of Applied Physics, 1969
- The Radiation Compaction of Vitreous SilicaJournal of Applied Physics, 1968
- Optical Waveguides Formed by Proton Irradiation of Fused Silica*†Journal of the Optical Society of America, 1968
- Cesium-Ion Bombardment of Aluminum Oxide in a Controlled Oxygen EnvironmentJournal of Applied Physics, 1967
- Sputtering of Vitreous Silica by 20- to 60-kev Xe+ IonsJournal of Applied Physics, 1961