The measurement of doping profiles in thick epitaxial layers of GaP using Schottky barrier C-V data
- 31 October 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (10) , 1407-1413
- https://doi.org/10.1016/0038-1101(70)90174-7
Abstract
No abstract availableKeywords
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