Roughening of single-crystal silicon surface etched by KOH water solution
- 1 March 1999
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 73 (1-2) , 122-130
- https://doi.org/10.1016/s0924-4247(98)00270-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Characterization of anisotropic etching properties of single-crystal silicon: effects of KOH concentration on etching profilesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Anisotropic-etching process simulation system MICROCAD analyzing complete 3D etching profiles of single crystal siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Anistropic multi-step etch processes of siliconJournal of Micromechanics and Microengineering, 1997
- On the Mechanism of Anisotropic Etching of SiliconJournal of the Electrochemical Society, 1993