Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films
- 1 September 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (9) , 343-344
- https://doi.org/10.1109/55.709637
Abstract
In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, we report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300/spl deg/C, and produces devices with mobilities up to 450 cm/sup 2//Vs, on/off current ratios greater than 10/sup 7/, without using a post-hydrogenation step. We believe these results represent the highest performance TFT's to date fabricated from sputtered silicon films.Keywords
This publication has 11 references indexed in Scilit:
- High-performance thin-film transistors fabricated using excimer laser processing and grain engineeringIEEE Transactions on Electron Devices, 1998
- On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si filmsApplied Physics Letters, 1994
- Laser dehydrogenation/crystallization of plasma-enhanced chemical vapor deposited amorphous silicon for hybrid thin film transistorsApplied Physics Letters, 1994
- Current characteristics of polycrystalline thin-film transistors using sputtered silicon filmsSolid-State Electronics, 1993
- Electrical analysis of high-mobility poly-Si TFTs made from laser-irradiated sputtered Si FilmsIEEE Transactions on Electron Devices, 1992
- High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon filmIEEE Transactions on Electron Devices, 1989
- Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDsIEEE Transactions on Electron Devices, 1989
- Leakage current mechanisms in Hydrogen-passivated fine-grain polycrystalline Silicon on insulator MOSFET'sIEEE Transactions on Electron Devices, 1986
- Fabrication of submicrometer MOSFET's using gas immersion laser doping (GILD)IEEE Electron Device Letters, 1986
- Anomalous leakage current in LPCVD PolySilicon MOSFET'sIEEE Transactions on Electron Devices, 1985