Laser dehydrogenation/crystallization of plasma-enhanced chemical vapor deposited amorphous silicon for hybrid thin film transistors
- 28 February 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (9) , 1132-1134
- https://doi.org/10.1063/1.110829
Abstract
A low temperature process for laser dehydrogenation and crystallization of hydrogenated amorphous silicon (a-Si:H) has been developed. This process removes hydrogen by laser irradiations at three energy steps. Studies of hydrogen out-diffusion and microstructure show that hydrogen out-diffusion depends strongly on film structure and the laser energy density. Both high quality and low leakage bottom gate polycrystalline silicon and a-Si:H thin film transistors were monolithically fabricated on the same Corning 7059 glass substrate with a maximum process temperature of only 350 °C.Keywords
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