Gallium doping of silicon molecular beam epitaxial layers at low temperatures and under Si+ ion bombardment
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 184 (1-2) , 75-83
- https://doi.org/10.1016/0040-6090(90)90400-8
Abstract
No abstract availableKeywords
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