Fabrication of p-i-n photodiodes on LPE-grown substrates
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (1) , 20-22
- https://doi.org/10.1109/55.31668
Abstract
Epitaxial growth of a thick heavily doped silicon layer on a highly resistive silicon wafer by the yo-yo solute feeding method and its application to p-i-n photodiodes are discussed. An abrupt transition of the impurity profile is obtained between the n/sup +/ layer (1.95*10/sup 19/ cm/sup -3/, 450 mu m) and the n/sup -/ layer (7.0*10/sup 11/ cm/sup -3/, 80 mu m). It is possible to use the thick intrinsic layers as the active region of power devices.Keywords
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