Physical properties and structure of carbon-rich a-SiC:H films prepared by r.f. glow discharge decomposition
- 1 June 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 173 (2) , 253-262
- https://doi.org/10.1016/0040-6090(89)90141-7
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Physics of Amorphous Silicon–Carbon AlloysPhysica Status Solidi (b), 1987
- Preparation–physical structure relations in SiC sputtered filmsJournal of Vacuum Science & Technology A, 1984
- Microhardness and other properties of hydrogenated amorphous silicon carbide thin films formed by plasma-enhanced chemical vapor depositionThin Solid Films, 1983
- Properties and structure of a-SiC:H for high-efficiency a-Si solar cellJournal of Applied Physics, 1982
- Composition-dependent stokes shift of photoluminescence in amorphous SixC1−xJournal of Luminescence, 1981
- Reaction mechanisms in plasma deposition of SixC1-x:H filmsThin Solid Films, 1981
- Infrared absorption of hydrogenated amorphous SiC and GeC filmsThin Solid Films, 1980
- Reactive plasma deposited SixCyHz filmsThin Solid Films, 1979
- Vibrational spectrum of hydrogenated amorphous Si-C filmsPhysica Status Solidi (b), 1979
- Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge techniquePhilosophical Magazine, 1977