Silicon self-diffusion under extrinsic conditions
- 24 December 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (26) , 4328-4330
- https://doi.org/10.1063/1.1425953
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched 30Si LayerJapanese Journal of Applied Physics, 2001
- Self-Diffusion in Silicon: Similarity between the Properties of Native Point DefectsPhysical Review Letters, 1999
- Self-Diffusion in Isotopically Controlled Heterostructures of Elemental and Compound SemiconductorsMRS Proceedings, 1998
- Native Defects and their Interactions with Impurities in SiliconMRS Proceedings, 1997
- First-principles calculations of self-diffusion constants in siliconPhysical Review Letters, 1993
- Negative-U Properties for Point Defects in SiliconPhysical Review Letters, 1980
- Comparison of theory with quenching experiments for the entropy and enthalpy of vacancy formation in Si and GePhysical Review B, 1976
- Entropy of ionization and temperature variation of ionization levels of defects in semiconductorsPhysical Review B, 1976
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967
- Solubility of Flaws in Heavily-Doped SemiconductorsPhysical Review B, 1960