InGaAsP LEDs for 1.3-μm Optical Transmission
- 1 January 1983
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 62 (1) , 1-24
- https://doi.org/10.1002/j.1538-7305.1983.tb04376.x
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Growth of InP and InGaAsP (E g≥1.15 eV) layers by liquid phase epitaxy under phosphorus overpressureApplied Physics Letters, 1982
- Perfection of homoepitaxial layers grown on (001) InP substratesApplied Physics Letters, 1981
- High radiance InGaAsP/InP lensed LED́s for optical communication systems at 1.2-1.3 µmIEEE Journal of Quantum Electronics, 1981
- Optical sources for fiber transmission systemsProceedings of the IEEE, 1980
- In 0.53 Ga 0.47 As p-i-n photodiodes for long-wavelength fibre-optic systemsElectronics Letters, 1979
- GaInAsP/InP fast, high-radiance, 1.05-1.3-µm wavelength LED's with efficient lens coupling to small numerical aperture Silica optical fibersIEEE Transactions on Electron Devices, 1979
- Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μmApplied Physics Letters, 1978
- Material dispersion in lightguide glassesElectronics Letters, 1978
- Fiber-optical transmission between 0.8 and 1.4 µmIEEE Transactions on Electron Devices, 1978
- Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μmElectronics Letters, 1977