Material characterization of an ion-implantation process for p-type (InGa)As/GaAs quantum-well structures

This publication has 10 references indexed in Scilit:

• Stability of strained quantum-well field-effect transistor structures
  IEEE Electron Device Letters, 1988
• Photoluminescence line shape in degenerate semiconductor quantum wells
  Physical Review B, 1988
• Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance
  IEEE Electron Device Letters, 1988
• Thermal conversion of AlxGa1−xAs layers grown by molecular beam epitaxy
  Applied Physics Letters, 1987
• Characterization of ion-implantation doping of strained-layer superlattices. I. Structural properties
  Journal of Applied Physics, 1986
• p-channel, strained quantum well, field-effect transistor
  Applied Physics Letters, 1986
• Rapid thermal annealing of Si implanted GaAs for power field-effect transistors
  Applied Physics Letters, 1985
• Light-hole conduction in InGaAs/GaAs strained-layer superlattices
  Applied Physics Letters, 1985
• Device technology comparison in the context of large scale digital applications
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1982
• Physical limits in digital electronics
  Proceedings of the IEEE, 1975