Material and device properties of heteroepitaxial GaAs on BeO
- 31 August 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (8) , 855-862
- https://doi.org/10.1016/0038-1101(74)90035-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Dislocation Etchant for Beryllium OxideJournal of the American Ceramic Society, 1973
- Heteroepitaxial GaAs on Aluminum Oxide: Electrical Properties of Undoped FilmsJournal of Applied Physics, 1971
- High-temperature behavior of GaAs junctions prepared by different techniquesSolid-State Electronics, 1971
- Silicon and gallium arsenide field-effect transistors with Schottky-barrier gateSolid-State Electronics, 1969
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968
- Study of Defect Structures in BeO Single Crystals by X-Ray Diffraction TopographyJournal of Applied Physics, 1965
- Growth and properties of beryllium oxide single crystalsJournal of Nuclear Materials, 1964
- Directional Dilatation of Crystal Lattices at Elevated TemperaturesJournal of the American Ceramic Society, 1957