High-temperature behavior of GaAs junctions prepared by different techniques
- 31 March 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (3) , 191-198
- https://doi.org/10.1016/0038-1101(71)90032-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968
- Aging effects in GaAs electroluminescent diodesSolid-State Electronics, 1967
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Temperature Dependence and Lifetime in Semiconductor JunctionsJournal of Applied Physics, 1959