Temperature Dependence and Lifetime in Semiconductor Junctions

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Abstract
The temperature dependence of a semiconductor p‐n junction over a given temperature range can be held to a minimum by using material with a minority carrier lifetime below a certain maximum value. The first‐order temperature dependence of the junction currents is then iαe−Eg/2kT, rather than iαe−Eg/kT, over the entire operating temperature range. Calculations applied to gallium arsenide in monograph form show that an optimum lifetime should be practically attainable by controlled doping with recombination‐center impurities. The maximum‐lifetime condition fixes the last remaining degree of freedom in the choice of semiconductor material properties for junction device design. The upper operating temperature limit of junction devices is calculated for germanium, silicon, indium phosphide, and gallium arsenide.