High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range
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- 24 July 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (15) , 1126-1128
- https://doi.org/10.1049/el:20030753
Abstract
Stacked InAs/InGaAs quantum dots are used as an active media of metamorphic InGaAs–InGaAlAs lasers grown on GaAs substrates by molecular beam epitaxy. High quantum efficiency (ηi>60%) and low internal losses (α−1) are realised. The transparency current density per single QD layer is estimated as ∼70 A/cm2 and the characteristic temperature is 60 K (20–85°C). The emission wavelength exceeds 1.51 µm at temperatures above 60°C.Keywords
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