1.5 µm laser on GaAs with GaInNAsSb quinary quantum well
- 20 March 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (6) , 519-520
- https://doi.org/10.1049/el:20030367
Abstract
A 1.50 µm broad area edge emitting laser is demonstrated with a structure grown by molecular beam epitaxy on a GaAs substrate. The active region is based on a single GaInNAsSb quantum well. The threshold current density is 3.5 kA/cm2. Output power over 22 mW per facet is achieved.Keywords
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