Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers

InGaAsN:Sb/GaAs quantum wells (QWs) were grown by solid-source molecular beam epitaxy using a ${\mathrm{N}}_{\mathrm{2}}$ radio-frequency plasma source. Photoluminescence reveals an enhancement in the optical properties of $\mathrm{InGaAsN/GaAs}$ QWs by the introduction of Sb flux during growth. X-ray diffraction and reflection high-energy electron diffraction analyses indicate that Sb acts as a surfactant. This technique was used to improve the performance of long-wavelength InGaAsN laser diodes. A low-threshold current density of 520 A/cm² was achieved for an $\mathrm{InGaAsN:Sb/GaAs}$ single quantum well 1.2 μm laser diode at room temperature under pulsed operation.