Low threshold InGaAsN/GaAs single quantum welllasers grown by molecular beam epitaxy using Sb surfactant
- 24 June 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (13) , 1081-1082
- https://doi.org/10.1049/el:19990746
Abstract
Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low threshold current density of 1.47 kA/cm2 and a quantum efficiency of 0.11 W/A are reported for broad area laser diodes (LDs) operating at a wavelength of 1.275 µm under pulsed operation at room temperature.Keywords
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