1.2 µm range GaInAs SQW lasers using Sb assurfactant
- 3 August 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (16) , 1379-1381
- https://doi.org/10.1049/el:20000976
Abstract
Highly strained Ga0.61In0.39AsySb1-y(y ≥ 0.995)/GaAs SQW lasers that incorporate a small amount of Sb have been successfully grown by gas-source molecular beam epitaxy (GSMBE). The lasing wavelength is 1.185 µm, and the threshold current density is as low as 280 A/cm2, which is one of the lowest ever reported for 1.2 µm range GaInAs quantum film (QF) lasers. The lasing wavelength is the longest value ever reported for MBE-grown GaInAs/GaAs QF system to the best of the authors' knowledge. It has been confirmed for the first time that Sb reacts in a highly strained GaInAs/GaAs system as a surfactant, which increases the critical thickness at which the growth mode changes from two-dimentional (2D) to three-dimentional (3D) growth.Keywords
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