1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 11 (12) , 1572-1574
- https://doi.org/10.1109/68.806850
Abstract
We demonstrate here 1.2-/spl mu/m laser emission from a GaAsP-InGaAs strain compensated single-quantum-well (SQW) diode. This development enables the fabrication of vertical-cavity surface-emitting lasers for optical interconnection through Si wafers. Strain compensation and low temperature growth were used to extend the wavelength of emission to the longest yet achieved on a GaAs substrate in this materials system. The minimum threshold density achieved was 273.4 A/cm/sup 2/ at a cavity length of 610 /spl mu/m. We have also demonstrated an 1.144-/spl mu/m lasing wavelength in a 820-/spl mu/m-long cavity on a GaAs substrate with a strained InGaAs-GaAs SQW laser for comparison using a low-temperature metal-organic chemical vapor deposition growth technique. The threshold current density for a 590-/spl mu/m-long cavity under CW operation was 149.7 A/cm/sup 2/.Keywords
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