Improved photoluminescence properties of highly strained InGaAs/GaAs quantum wells grown by molecular-beam epitaxy
- 1 August 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (3) , 1685-1688
- https://doi.org/10.1063/1.360265
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
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