In surface segregation and growth-mode transition during InGaAs growth by molecular-beam epitaxy

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Abstract
An In surface segregation effect during the growth of InGaAs on GaAs by molecular‐beam epitaxy has been studied by reflection high‐energy electron diffraction measurements supported by a segregation model. Indium atoms segregate at a ratio of more than 0.8 under the conventional growth conditions for InGaAs, which causes the formation of accumulated In atoms on the surface. The transition from two‐dimensional to three‐dimensional growth occurs when the amount of In reaches around 1.7 monolayer with a nominal alloy composition greater than 0.25. This transition determines the upper limit on the In composition of the InGaAs layer for application as an electron channel in modulation‐doped field‐effect transistors.