Materials characteristics of pseudomorphic high electron mobility transistor structures with InxGa1−xas single quantum well and GaAs-InxGa1−xas (0.25 < x < 0.4) thin strained superlattice active layers
- 1 June 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (6) , 509-513
- https://doi.org/10.1007/bf02651271
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Novel pseudomorphic high electron mobility transistor structures with GaAs-In0.3Ga0.7As thin strained superlattice active layersApplied Physics Letters, 1989
- Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular-beam epitaxial growth of InGaAs single quantum wells on GaAsJournal of Vacuum Science & Technology B, 1989
- Stability of strained quantum-well field-effect transistor structuresIEEE Electron Device Letters, 1988
- Summary Abstract: The growth of strained InGaAs on GaAs: Kinetics versus energeticsJournal of Vacuum Science & Technology B, 1988
- Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structuresJournal of Vacuum Science & Technology B, 1988
- A study of strain-related effects in the molecular-beam epitaxy growth of InxGa1−xAs on GaAs using reflection high-energy electron diffractionJournal of Vacuum Science & Technology B, 1987
- Theory of resonant tunneling in a variably spaced multiquantum well structure: An Airy function approachJournal of Applied Physics, 1987
- Optical characterization of pseudomorphic InxGa1−xAs–GaAs single-quantum-well heterostructuresJournal of Applied Physics, 1986
- RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)Journal of Vacuum Science & Technology B, 1984
- Man-made quantum wells: A new perspective on the finite square-well problemAmerican Journal of Physics, 1984