The physics of quantum well structures

Publisher Website
Google Scholar
Abstract
Recently developed methods for growing epitaxial layers of semiconductors have included the ability to exercise independent and spatial control over both the semiconductor band gap and the level of doping. A whole new range of tailored test structures is available for probing physical phenomena on the very short length and time scales appropriate to semiconductors. Many of the effects rely on the quasi-two-dimensionality of the carriers, but under suitable conditions the transition to higher and lower dimensions can be achieved. Some of the key concepts, principal results and current lines of research in this rapidly developing field are summarised here.